Wayon WMLL013N08HGS
| Manufacturer | WayonAsian Brands |
| MPN | WMLL013N08HGS |
| LCSC Part # | C37656686 |
| Packaging | TOLL |
| Customer # | |
| Key Attributes | MOSFET N-CH 80V 400A TOLL |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wayon | |
| Packaging | TOLL | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 2.615nF | |
| Current - Continuous Drain(Id) | 400A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 468.8W | |
| RDS(on) | 1.05mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13.085nF | |
| Gate Charge(Qg) | 243.6nC@10V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The WMLL013N08HGS utilizes Wayon's advanced power trench MOSFET technology, specially optimized to minimize on-resistance while maintaining superior switching performance. This device is ideal for high-efficiency fast-switching applications.
Features
AI Translation
- Drain-source voltage (VDS) = 80 V, drain current (ID) = 400 A
- On-resistance (RDS(on)) < 1.35 mΩ at VGS = 10 V
- RoHS-compliant devices available
- Low gate charge
- 100% guaranteed avalanche-rated
Applications
AI Translation
- Power management switches
- DC-DC converters
- LED backlighting
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.094 | $ 1.09 |
| 10+ | $ 0.9019 | $ 9.02 |
| 30+ | $ 0.8066 | $ 24.20 |
| 100+ | $ 0.7113 | $ 71.13 |
| 500+ | $ 0.6542 | $ 327.10 |
| 1,000+ | $ 0.624 | $ 624.00 |
Standard Packaging2000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wayon | |
| Packaging | TOLL | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 2.615nF | |
| Current - Continuous Drain(Id) | 400A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 468.8W | |
| RDS(on) | 1.05mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13.085nF | |
| Gate Charge(Qg) | 243.6nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The WMLL013N08HGS utilizes Wayon's advanced power trench MOSFET technology, specially optimized to minimize on-resistance while maintaining superior switching performance. This device is ideal for high-efficiency fast-switching applications.
Features
AI Translation
- Drain-source voltage (VDS) = 80 V, drain current (ID) = 400 A
- On-resistance (RDS(on)) < 1.35 mΩ at VGS = 10 V
- RoHS-compliant devices available
- Low gate charge
- 100% guaranteed avalanche-rated
Applications
AI Translation
- Power management switches
- DC-DC converters
- LED backlighting
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



