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MATSUKI ME15N25-G
| Manufacturer | MATSUKIAsian Brands |
| MPN | ME15N25-G |
| LCSC Part # | C3647146 |
| Packaging | TO-252-3L |
| Customer # | |
| Key Attributes | MOSFET N-CH 250V 17.1A TO-252-3L |
| Datasheet | MATSUKI ME15N25-G |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | TO-252-3L | |
| Output Capacitance(Coss) | 112pF | |
| Ciss-Input Capacitance | 3.48nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Drain to Source Voltage | 250V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 17.1A | |
| Reverse Transfer Capacitance (Crss) | 51pF | |
| RDS(on) | 265mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 70.8nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | TO-252-3L | |
| Output Capacitance(Coss) | 112pF | |
| Ciss-Input Capacitance | 3.48nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Drain to Source Voltage | 250V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 17.1A | |
| Reverse Transfer Capacitance (Crss) | 51pF | |
| RDS(on) | 265mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 70.8nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The ME15N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.
Features
AI Translation
- RDS(ON)≦265mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Applications
AI Translation
- DC/DC Converter
- Load Switch
- LCD/ LED Display inverter
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In-Stock: 2
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Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5351 | $ 0.54 |
| 10+ | $ 0.424 | $ 4.24 |
| 30+ | $ 0.3747 | $ 11.24 |
| 100+ | $ 0.316 | $ 31.60 |
| 500+ | $ 0.289 | $ 144.50 |
| 1,000+ | $ 0.2731 | $ 273.10 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | TO-252-3L | |
| Output Capacitance(Coss) | 112pF | |
| Ciss-Input Capacitance | 3.48nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Drain to Source Voltage | 250V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 17.1A | |
| Reverse Transfer Capacitance (Crss) | 51pF | |
| RDS(on) | 265mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 70.8nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | TO-252-3L | |
| Output Capacitance(Coss) | 112pF | |
| Ciss-Input Capacitance | 3.48nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Drain to Source Voltage | 250V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 17.1A | |
| Reverse Transfer Capacitance (Crss) | 51pF | |
| RDS(on) | 265mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 70.8nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The ME15N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.
Features
AI Translation
- RDS(ON)≦265mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Applications
AI Translation
- DC/DC Converter
- Load Switch
- LCD/ LED Display inverter
C3647146 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| TPM2517NHK3-1 | TECH PUBLIC | Similar | TO-252 | 500 | $0.7361 $0.8178 | ||
| FQD16N25CTM-TP | TECH PUBLIC | Similar | TO-252 | 2,448 | $0.7942 $0.836 | ||
| FQD9N25TM-TP | TECH PUBLIC | Similar | TO-252 | 485 | $0.5308 $0.5587 | ||
| TK13P25D-TP | TECH PUBLIC | Similar | TO-252 | 2,570 | $0.9064 $0.9541 | ||
| TPM2517NHK3 | TECH PUBLIC | Similar | TO-252 | 484 | $0.7272 $0.808 |