BORN AO3400A
| Manufacturer | BORNAsian Brands |
| MPN | AO3400A |
| LCSC Part # | C344010 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 5.8A SOT-23 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | BORN | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 99pF | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 32mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 823pF | |
| Vgs | ±12V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | BORN | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 99pF | |
| Current - Continuous Drain(Id) | 5.8A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 32mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 823pF | |
| Vgs | ±12V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Advanced trench process technology
- High Density Cell Design For Ultra Low On-Resistance
In-Stock: 176,570
176,570 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0633 | $ 0.63 |
| 100+ | $ 0.0527 | $ 5.27 |
| 300+ | $ 0.0475 | $ 14.25 |
| 3,000+ | $ 0.0333 | $ 99.90 |
| 6,000+ | $ 0.0302 | $ 181.20 |
| 9,000+ | $ 0.0286 | $ 257.40 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | BORN | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 99pF | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 32mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 823pF | |
| Vgs | ±12V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | BORN | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 99pF | |
| Current - Continuous Drain(Id) | 5.8A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 32mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 823pF | |
| Vgs | ±12V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Advanced trench process technology
- High Density Cell Design For Ultra Low On-Resistance
C344010 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



