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MICROCHIP APT10035LFLLG
| Manufacturer | |
| MPN | APT10035LFLLG |
| LCSC Part # | C3293046 |
| Packaging | TO-264-3 |
| Customer # | |
| Key Attributes | 266W 1kV 8A 5V 1.6Ω@10V 1 N-channel N-Channel TO-264-3 Single FETs, MOSFETs RoHS |
| Datasheet | MICROCHIP APT10035LFLLG |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-264-3 | |
| Output Capacitance(Coss) | 230pF | |
| Pd - Power Dissipation | 266W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 1.6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.32nF | |
| Gate Charge(Qg) | 55nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-264-3 | |
| Output Capacitance(Coss) | 230pF | |
| Pd - Power Dissipation | 266W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 8A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 1.6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.32nF | |
| Gate Charge(Qg) | 55nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Power MOS 7® is a new generation of low-loss, high-voltage, N-channel enhancement-mode power MOSFETs. Power MOS 7® addresses both conduction loss and switching loss by significantly reducing RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses with the extremely fast switching speeds inherent in Advanced Power Technology's (APT) patented metal gate structure.
Features
AI Translation
- Lower input capacitance
- Lower Miller capacitance
- Lower gate charge Qg
- Higher power dissipation
- Easier to drive
- TO-247 or surface-mount D3PAK package
- Fast recovery body diode
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 37.7057 | $ 37.71 |
| 200+ | $ 14.5919 | $ 2918.38 |
| 500+ | $ 14.0797 | $ 7039.85 |
| 1,000+ | $ 13.8266 | $ 13826.60 |
Standard Packaging1/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-264-3 | |
| Output Capacitance(Coss) | 230pF | |
| Pd - Power Dissipation | 266W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 1.6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.32nF | |
| Gate Charge(Qg) | 55nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-264-3 | |
| Output Capacitance(Coss) | 230pF | |
| Pd - Power Dissipation | 266W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 8A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 1.6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.32nF | |
| Gate Charge(Qg) | 55nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Power MOS 7® is a new generation of low-loss, high-voltage, N-channel enhancement-mode power MOSFETs. Power MOS 7® addresses both conduction loss and switching loss by significantly reducing RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses with the extremely fast switching speeds inherent in Advanced Power Technology's (APT) patented metal gate structure.
Features
AI Translation
- Lower input capacitance
- Lower Miller capacitance
- Lower gate charge Qg
- Higher power dissipation
- Easier to drive
- TO-247 or surface-mount D3PAK package
- Fast recovery body diode
C3293046 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| APT10050LVFRG | MICROCHIP | TO-264-3 | 0 | $ 29.1082 | ||
| APT10045LFLLG | MICROCHIP | TO-264-3 | 0 | $ 31.0632 | ||
| APT28M120L | MICROCHIP | TO-264 | 0 | $ 50.0917 | ||
| APT12067LFLLG | MICROCHIP | TO-264-3 | 0 | $ 38.8721 | ||
| APT37M100L | MICROCHIP | TO-264 | 0 | $ 22.7423 | ||
| APT31M100L | MICROCHIP | TO-264 | 0 | $ 18.1655 | ||
| APT10045LLLG | MICROCHIP | TO-264-3 | 0 | $ 30.4568 | ||
| APT10050LVRG | MICROCHIP | TO-264-3 | 0 | $ 27.4572 | ||
| APT10035LLLG | MICROCHIP | TO-264-3 | 0 | $ 37.2196 | ||
| APT12080LVRG | MICROCHIP | TO-264(L) | 0 | $ 28.4602 |