DIODES DMN2040UVT-7
| Manufacturer | |
| MPN | DMN2040UVT-7 |
| LCSC Part # | C3291373 |
| Packaging | TSOT-23-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 6.7A TSOT-23-6 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | TSOT-23-6 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF | |
| RDS(on) | 32mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 667pF | |
| Gate Charge(Qg) | 7.5nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low input capacitance
- Low on-resistance
- Fast switching speed
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free, "Green" device
Applications
AI Translation
- DC-DC Converter - Power Management - Backlight
In-Stock: 50
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1016 | $ 0.51 |
| 50+ | $ 0.0994 | $ 4.97 |
| 150+ | $ 0.098 | $ 14.70 |
| 500+ | $ 0.0965 | $ 48.25 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | TSOT-23-6 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF | |
| RDS(on) | 32mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 667pF | |
| Gate Charge(Qg) | 7.5nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low input capacitance
- Low on-resistance
- Fast switching speed
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free, "Green" device
Applications
AI Translation
- DC-DC Converter - Power Management - Backlight
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



