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onsemi FDP15N65
| Manufacturer | |
| MPN | FDP15N65 |
| LCSC Part # | C3290281 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | 650V, 15A, N-Channel MOSFET |
| Datasheet | onsemi FDP15N65 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Output Capacitance(Coss) | 295pF | |
| Ciss-Input Capacitance | 3.095nF | |
| Pd - Power Dissipation | 38.5W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 15A | |
| Reverse Transfer Capacitance (Crss) | 35.5pF | |
| RDS(on) | 440mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 63nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Output Capacitance(Coss) | 295pF | |
| Ciss-Input Capacitance | 3.095nF | |
| Pd - Power Dissipation | 38.5W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 15A | |
| Reverse Transfer Capacitance (Crss) | 35.5pF | |
| RDS(on) | 440mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 63nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
- 15A, 650V, RDS(on)=0.44Ω @ VGS=10V
- Low gate charge ( typical 48.5 nC)
- Low Crss ( typical 23.6 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
- This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
Features
AI Translation
- 15A, 650V, RDS(on)=0.44Ω @ VGS=10V
- Low gate charge ( typical 48.5 nC)
- Low Crss ( typical 23.6 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
AI Translation
- high efficient switched mode power supplies
- active power factor correction
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.5909 | $ 1.59 |
| 200+ | $ 0.6157 | $ 123.14 |
| 500+ | $ 0.5941 | $ 297.05 |
| 1,000+ | $ 0.5833 | $ 583.30 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Output Capacitance(Coss) | 295pF | |
| Ciss-Input Capacitance | 3.095nF | |
| Pd - Power Dissipation | 38.5W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 15A | |
| Reverse Transfer Capacitance (Crss) | 35.5pF | |
| RDS(on) | 440mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 63nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Output Capacitance(Coss) | 295pF | |
| Ciss-Input Capacitance | 3.095nF | |
| Pd - Power Dissipation | 38.5W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 15A | |
| Reverse Transfer Capacitance (Crss) | 35.5pF | |
| RDS(on) | 440mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 63nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
- 15A, 650V, RDS(on)=0.44Ω @ VGS=10V
- Low gate charge ( typical 48.5 nC)
- Low Crss ( typical 23.6 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
- This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
Features
AI Translation
- 15A, 650V, RDS(on)=0.44Ω @ VGS=10V
- Low gate charge ( typical 48.5 nC)
- Low Crss ( typical 23.6 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
AI Translation
- high efficient switched mode power supplies
- active power factor correction
C3290281 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| JCS15N70FC | Jilin Sino-Microelectronics | Similar | TO-220MF | 430 | $0.5639 $0.7518 | ||
| STF25N80K5 | ST | Similar | TO-220-3 | 3 | $ 9.3091 | ||
| NTP082N65S3HF | onsemi | Similar | TO-220 | 4 | $ 11.7932 | ||
| SVF18N65F | Hangzhou Silan Microelectronics | Similar | TO-220 | 100 | $ 1.1162 | ||
| STP30N65M5 | ST | Similar | TO-220 | 7 | $ 7.1542 |