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Zdjęcia poglądowe
Modele EDAEasyEDA
ST STD15N60DM6
| Producent | |
| Nr części prod. | STD15N60DM6 |
| Nr LCSC | C3288411 |
| Opak. | TO-252(DPAK) |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 600V 12A TO-252(DPAK) |
| Karta Katalogowa | ST STD15N60DM6 |
| Zgodność z RoHS | 3 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | TO-252(DPAK) | |
| Output Capacitance(Coss) | 40pF | |
| Ciss-Input Capacitance | 607pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 12A | |
| Reverse Transfer Capacitance (Crss) | 4pF | |
| RDS(on) | 338mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 15.3nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | TO-252(DPAK) | |
| Output Capacitance(Coss) | 40pF | |
| Ciss-Input Capacitance | 607pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 12A | |
| Reverse Transfer Capacitance (Crss) | 4pF | |
| RDS(on) | 338mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 15.3nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Type | N-Channel |
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Opis
Tłumaczenie AI
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Ωrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Funkcje
Tłumaczenie AI
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Zastosowania
Tłumaczenie AI
- Switching applications
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 3.369 | $ 3.37 |
| 10+ | $ 3.3011 | $ 33.01 |
| 30+ | $ 3.2558 | $ 97.67 |
| 100+ | $ 2.9013 | $ 290.13 |
Standardowa Obudowa2500/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | TO-252(DPAK) | |
| Output Capacitance(Coss) | 40pF | |
| Ciss-Input Capacitance | 607pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 12A | |
| Reverse Transfer Capacitance (Crss) | 4pF | |
| RDS(on) | 338mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 15.3nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | TO-252(DPAK) | |
| Output Capacitance(Coss) | 40pF | |
| Ciss-Input Capacitance | 607pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 12A | |
| Reverse Transfer Capacitance (Crss) | 4pF | |
| RDS(on) | 338mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 15.3nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Ωrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Funkcje
Tłumaczenie AI
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Zastosowania
Tłumaczenie AI
- Switching applications
C3288411 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| STD16N60M6 | ST | Podobne | DPAK(TO-252) | 10 | $ 4.7488 | ||
| STD18N60M6 | ST | Podobne | DPAK | 10 | $ 3.3322 | ||
| STD16N60M2 | ST | Podobne | DPAK | 1,405 | $ 0.8969 | ||
| MOT70R280D | MOT | Podobne | TO-252 | 301 | $0.6974 $0.7748 | ||
| STD13N60DM2 | ST | Podobne | TO-252(DPAK) | 2,212 | $ 1.1505 |