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Infineon IPB051NE8NGATMA1
| Manufacturer | |
| MPN | IPB051NE8NGATMA1 |
| LCSC Part # | C3282792 |
| Packaging | TO-263-3 |
| Customer # | |
| Key Attributes | N-channel, Current:100A, Voltage:85V |
| Datasheet | Infineon IPB051NE8NGATMA1 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-3 | |
| Drain to Source Voltage | 85V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 2.27nF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF | |
| RDS(on) | 5.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12.1nF | |
| Gate Charge(Qg) | 180nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-3 | |
| Drain to Source Voltage | 85V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 2.27nF | |
| Current - Continuous Drain(Id) | 100A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF | |
| RDS(on) | 5.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12.1nF | |
| Gate Charge(Qg) | 180nC@10V |
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Features
AI Translation
- N-channel, normally-on
- Excellent gate charge x RDS(on) product (figure of merit)
- Ultra-low on-resistance RDS(on)
- Operating temperature up to 175°C
- Lead-free lead finish; RoHS compliant
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.7899 | $ 1.79 |
| 200+ | $ 0.6928 | $ 138.56 |
| 500+ | $ 0.6682 | $ 334.10 |
| 1,000+ | $ 0.6558 | $ 655.80 |
Standard Packaging1000/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-3 | |
| Drain to Source Voltage | 85V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 2.27nF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF | |
| RDS(on) | 5.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12.1nF | |
| Gate Charge(Qg) | 180nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-3 | |
| Drain to Source Voltage | 85V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 2.27nF | |
| Current - Continuous Drain(Id) | 100A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF | |
| RDS(on) | 5.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12.1nF | |
| Gate Charge(Qg) | 180nC@10V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- N-channel, normally-on
- Excellent gate charge x RDS(on) product (figure of merit)
- Ultra-low on-resistance RDS(on)
- Operating temperature up to 175°C
- Lead-free lead finish; RoHS compliant
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
C3282792 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IPB038N12N3GATMA1 | Infineon | TO-263-3 | 16 | $ 4.5166 | ||
| IPB027N10N3 G | Infineon | TO-263-3 | 53 | $ 3.1957 | ||
| IPB020N10N5LF | Infineon | TO-263-3 | 935 | $ 7.473 | ||
| IPB072N15N3G | Infineon | TO-263-3 | 19,870 | $ 1.1927 | ||
| IPB048N15N5 | Infineon | TO-263-3 | 643 | $ 3.6027 | ||
| IPB100N12S3-05 | Infineon | TO-263-3 | 10 | $2.4947 $6.5648 | ||
| IPB100N10S3-05 | Infineon | TO-263-3 | 20 | $ 6.4336 | ||
| IPB100N12S305 | Infineon | TO-263-3 | 0 | $ 9.6909 | ||
| NCEP01T18D | NCE | TO-263-3 | 0 | $ 3.4821 | ||
| AUIRFS4010TRL | Infineon | TO-263-3 | 0 | $ 3.9004 |