Zdjęcia poglądowe
Modele EDAEasyEDA
RENESAS 2SJ550STL-E
| Producent | |
| Nr części prod. | 2SJ550STL-E |
| Nr LCSC | C3282435 |
| Opak. | - |
| Numer Klienta | |
| Klucz. cechy | P Channel MOSFET, Current: 15A, Voltage: 60V |
| Karta Katalogowa | RENESAS 2SJ550STL-E |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | RENESAS | |
| Opak. | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 420pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 155mΩ@4V | |
| Input Capacitance(Ciss) | 850pF | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | RENESAS | |
| Opak. | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 420pF | |
| Current - Continuous Drain(Id) | 15A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 155mΩ@4V | |
| Input Capacitance(Ciss) | 850pF | |
| Type | P-Channel |
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.1712 | $ 1.17 |
| 200+ | $ 0.4537 | $ 90.74 |
| 500+ | $ 0.4383 | $ 219.15 |
| 1,000+ | $ 0.4305 | $ 430.50 |
Standardowa Obudowa1000/Full Bag | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | RENESAS | |
| Opak. | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 420pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 155mΩ@4V | |
| Input Capacitance(Ciss) | 850pF | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | RENESAS | |
| Opak. | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 420pF | |
| Current - Continuous Drain(Id) | 15A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 155mΩ@4V | |
| Input Capacitance(Ciss) | 850pF | |
| Type | P-Channel |
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C3282435 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |