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onsemi RFD16N05LSM

Produttore
onsemi
Cod. Prod.
RFD16N05LSM
Cod. LCSC
C3281305
Imballo
TO-252(DPAK)
Numero Cliente
Attr. chiave
60W 50V 16A 47mΩ@5V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs
Scheda Tecnicaonsemi RFD16N05LSM
Parti alternative5
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Produttoreonsemi
ImballoTO-252(DPAK)
Output Capacitance(Coss)-
Ciss-Input Capacitance-
Pd - Power Dissipation60W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage50V
Current - Continuous Drain(Id)16A
Reverse Transfer Capacitance (Crss)-
RDS(on)47mΩ@5V
Number1 N-channel
Gate Charge(Qg)80nC@10V
Vgs±10V
Gate Threshold Voltage (Vgs(th))2V
TypeN-Channel
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Descrizione

Traduzione AI

These are N-channel logic-level power MOSFETs manufactured using the MegaFET process. This process employs feature sizes approaching LSI, enabling optimal silicon utilization for outstanding performance. They are designed for use with logic-level (5V) drive sources, suitable for applications including programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers, and bipolar transistor emitter switches. This performance is achieved through a special gate oxide design that delivers full rated conductance at gate biases of 3V to 5V, enabling true on/off power control directly from logic circuit supply voltages.

Caratteristiche

Traduzione AI
  • 16A, 50V
  • rDS(ON) = 0.047Ω
  • Single-pulse UIS SOA rated curve
  • Optimized for 5V gate drive
  • Directly driven by CMOS, NMOS, TTL circuits
  • Compliant with automotive drive requirements
  • SOA limited by power dissipation
  • Nanosecond switching speed
  • Linear transfer characteristics
  • High input impedance
  • Majority carrier device

Applicazioni

Traduzione AI
  • Programmable Controllers - Automotive Switches - Switching Regulators - Switching Converters - Motor Relay Drivers - Bipolar Transistor Emitter Switches