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onsemi RFD14N05SM

Produttore
onsemi
Cod. Prod.
RFD14N05SM
Cod. LCSC
C3281303
Imballo
TO-252(DPAK)
Numero Cliente
Attr. chiave
50V 14A 48W 100mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS
Scheda Tecnicaonsemi RFD14N05SM
Conformità RoHS3 documenti disponibili
Parti alternative5
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Produttoreonsemi
ImballoTO-252(DPAK)
Drain to Source Voltage50V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)185pF
Current - Continuous Drain(Id)14A
Ciss-Input Capacitance570pF
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss)50pF
RDS(on)100mΩ@10V
Number1 N-channel
Gate Charge(Qg)40nC@20V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Descrizione

Traduzione AI

These are N-channel power MOSFETs fabricated using the MegaFET process. This process employs feature sizes approaching those of LSI, enabling optimal utilization of silicon to achieve outstanding performance. They are designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be driven directly by ICs.

Caratteristiche

Traduzione AI
  • 14A, 50V
  • rDS(ON) = 0.100 Ω
  • Temperature-compensated PSPICE model
  • Peak current vs. pulse width curve
  • Unclamped Inductive Switching (UIS) rating curve
  • 175°C operating temperature

Applicazioni

Traduzione AI
  • Switching Regulators - Switching Converters - Motor Drivers - Relay Drivers