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Nexperia BSH205G2AR
| Manufacturer | |
| MPN | BSH205G2AR |
| LCSC Part # | C3280958 |
| Packaging | TO-236AB |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 2.6A TO-236AB |
| Datasheet |  Nexperia BSH205G2AR |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-236AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 10W | |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF | |
| RDS(on) | 118mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 421pF | |
| Gate Charge(Qg) | 7nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-236AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 10W | |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF | |
| RDS(on) | 118mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 421pF | |
| Gate Charge(Qg) | 7nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Low threshold voltage
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- Very fast switching
- AEC-Q101 qualified
Applications
AI Translation
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
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Minimum: 5Multiple: 5Sales Unit: Piece
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 5+ | $ 0.2113 | $ 1.06 |
| 50+ | $ 0.1773 | $ 8.87 |
| 150+ | $ 0.1628 | $ 24.42 |
| 500+ | $ 0.1446 | $ 72.30 |
| 3,000+ | $ 0.1365 | $ 409.50 |
| 6,000+ | $ 0.1316 | $ 789.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-236AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 10W | |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF | |
| RDS(on) | 118mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 421pF | |
| Gate Charge(Qg) | 7nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-236AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 10W | |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF | |
| RDS(on) | 118mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 421pF | |
| Gate Charge(Qg) | 7nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Low threshold voltage
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- Very fast switching
- AEC-Q101 qualified
Applications
AI Translation
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| DMP4065S | TECH PUBLIC | SOT-23 | 2,595 | $ 0.14 | ||
| DMP2110U-7 | DIODES | SOT-23 | 20 | $ 0.102 | ||
| HL3403 | R+O | SOT-23 | 3,170 | $0.0457 $0.0507 | ||
| SI2301 | BLUE ROCKET | SOT-23 | 20 | $ 0.0548 | ||
| SI2301 | PUOLOP | SOT-23 | 980 | $ 0.0307 | ||
| PT2301A | PUOLOP | SOT-23 | 280 | $ 0.0446 | ||
| BSH205G2A-HXY | HXY MOSFET | SOT-23 | 0 | $0.0315 $0.0331 | ||
| AO3401A(TOKMAS) | Tokmas | SOT-23 | 0 | $0.0260 $0.0288 | ||
| AO3401A | YONGYUTAI | SOT-23 | 0 | $0.0234 $0.0246 | ||
| TMP6003MI | Tritech-MOS | SOT-23-3L | 0 | $0.0612 $0.0644 |