Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TI | |
| Opak. | TO-220AB | |
| Output Capacitance(Coss) | 35pF | |
| Ciss-Input Capacitance | 135pF | |
| Pd - Power Dissipation | 36W | |
| Configuration | - | |
| Drain to Source Voltage | 400V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 3.6Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TI | |
| Opak. | TO-220AB | |
| Output Capacitance(Coss) | 35pF | |
| Ciss-Input Capacitance | 135pF | |
| Pd - Power Dissipation | 36W | |
| Configuration | - | |
| Drain to Source Voltage | 400V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 3.6Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Opis
IRF710, IRF711, IRF712, and IRF713 are n-channel enhancement-mode silicon gate power MOSFETs. The IRF710R, IRF711R, IRF712R, and IRF713R types are advanced power MOSFETs designed, tested, and guaranteed to withstand specified levels of energy in the avalanche breakdown operating mode. All of these power MOSFETs are suitable for switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These devices can be driven directly by ICs. The IRF series is available in JEDEC TO-220AB plastic packages.
Funkcje
- 1.7A and 2.0A, 350V - 400V
- r<sub>DS(on)</sub> = 3.6Ω and 5.0Ω
- Single pulse avalanche energy rated
- SOA limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
Zastosowania
- Standard applications: computers, office equipment, communications equipment, test and measurement equipment, audio/visual equipment, home electronics and appliances, machine tools, personal electronic devices, and industrial robots.
- High-quality applications: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, disaster prevention systems, anti-theft systems, safety equipment, and medical devices not specifically intended for life support.
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TI | |
| Opak. | TO-220AB | |
| Output Capacitance(Coss) | 35pF | |
| Ciss-Input Capacitance | 135pF | |
| Pd - Power Dissipation | 36W | |
| Configuration | - | |
| Drain to Source Voltage | 400V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 3.6Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TI | |
| Opak. | TO-220AB | |
| Output Capacitance(Coss) | 35pF | |
| Ciss-Input Capacitance | 135pF | |
| Pd - Power Dissipation | 36W | |
| Configuration | - | |
| Drain to Source Voltage | 400V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 3.6Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Opis
IRF710, IRF711, IRF712, and IRF713 are n-channel enhancement-mode silicon gate power MOSFETs. The IRF710R, IRF711R, IRF712R, and IRF713R types are advanced power MOSFETs designed, tested, and guaranteed to withstand specified levels of energy in the avalanche breakdown operating mode. All of these power MOSFETs are suitable for switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These devices can be driven directly by ICs. The IRF series is available in JEDEC TO-220AB plastic packages.
Funkcje
- 1.7A and 2.0A, 350V - 400V
- r<sub>DS(on)</sub> = 3.6Ω and 5.0Ω
- Single pulse avalanche energy rated
- SOA limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
Zastosowania
- Standard applications: computers, office equipment, communications equipment, test and measurement equipment, audio/visual equipment, home electronics and appliances, machine tools, personal electronic devices, and industrial robots.
- High-quality applications: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, disaster prevention systems, anti-theft systems, safety equipment, and medical devices not specifically intended for life support.
C3280739 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

