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NXP MRF101AN
| Manufacturer | |
| MPN | MRF101AN |
| LCSC Part # | C3280618 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | 115W 133V 2.2V 1 N-channel TO-220-3 RF FETs, MOSFETs RoHS |
| Datasheet | NXP MRF101AN |
| RoHS Compliance | 2 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | NXP | |
| Packaging | TO-220-3 | |
| Operating Temperature | -40℃~+175℃ | |
| Pd - Power Dissipation | 115W | |
| Output Capacitance(Coss) | 43.4pF | |
| Drain to Source Voltage | 133V | |
| Current - Continuous Drain(Id) | - | |
| RDS(on) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Configuration | Standalone | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.96pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 149pF | |
| Gate Charge(Qg) | - | |
| Vgs | -6V;10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | NXP | |
| Packaging | TO-220-3 | |
| Operating Temperature | -40℃~+175℃ | |
| Pd - Power Dissipation | 115W | |
| Output Capacitance(Coss) | 43.4pF | |
| Drain to Source Voltage | 133V | |
| Current - Continuous Drain(Id) | - | |
| RDS(on) | - |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Configuration | Standalone | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.96pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 149pF | |
| Gate Charge(Qg) | - | |
| Vgs | -6V;10V |
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Introduction
AI Translation
These devices are designed for high frequency (HF) and very high frequency (VHF) communications, industrial, scientific and medical (ISM), and broadcast applications. These devices are extremely rugged, exhibiting high performance at frequencies up to 250 MHz.
Features
AI Translation
- Mirror pinout versions (A and B) for push-pull and dual-transistor configurations
- Characterized over 30 to 50 V voltage range
- Suitable for linear applications
- Integrated ESD protection with extended negative gate-source voltage range for improved Class C operation
- Included in NXP's long-term supply program, guaranteed availability for at least 15 years after product introduction
Applications
AI Translation
- Industrial, Scientific, and Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- Magnetic Resonance Imaging (MRI) and other medical applications
- Industrial heating, welding, and drying systems
- Radio and VHF television broadcasting
- HF and VHF communications
- Switching mode power supplies
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 61.7142 | $ 61.71 |
| 30+ | $ 58.4547 | $ 1753.64 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | NXP | |
| Packaging | TO-220-3 | |
| Operating Temperature | -40℃~+175℃ | |
| Pd - Power Dissipation | 115W | |
| Output Capacitance(Coss) | 43.4pF | |
| Drain to Source Voltage | 133V | |
| Current - Continuous Drain(Id) | - | |
| RDS(on) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Configuration | Standalone | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.96pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 149pF | |
| Gate Charge(Qg) | - | |
| Vgs | -6V;10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | NXP | |
| Packaging | TO-220-3 | |
| Operating Temperature | -40℃~+175℃ | |
| Pd - Power Dissipation | 115W | |
| Output Capacitance(Coss) | 43.4pF | |
| Drain to Source Voltage | 133V | |
| Current - Continuous Drain(Id) | - | |
| RDS(on) | - |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Configuration | Standalone | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.96pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 149pF | |
| Gate Charge(Qg) | - | |
| Vgs | -6V;10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These devices are designed for high frequency (HF) and very high frequency (VHF) communications, industrial, scientific and medical (ISM), and broadcast applications. These devices are extremely rugged, exhibiting high performance at frequencies up to 250 MHz.
Features
AI Translation
- Mirror pinout versions (A and B) for push-pull and dual-transistor configurations
- Characterized over 30 to 50 V voltage range
- Suitable for linear applications
- Integrated ESD protection with extended negative gate-source voltage range for improved Class C operation
- Included in NXP's long-term supply program, guaranteed availability for at least 15 years after product introduction
Applications
AI Translation
- Industrial, Scientific, and Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- Magnetic Resonance Imaging (MRI) and other medical applications
- Industrial heating, welding, and drying systems
- Radio and VHF television broadcasting
- HF and VHF communications
- Switching mode power supplies
C3280618 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |