MCC BSS84DW-TP
| Manufacturer | |
| MPN | BSS84DW-TP |
| LCSC Part # | C3280248 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | P-CHANNEL MOSFET, Current:0.16A, Voltage:50V |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 160mA | |
| Pd - Power Dissipation | 450mW | |
| RDS(on) | 2.2Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Drain to Source Voltage | 50V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 30pF | |
| Gate Charge(Qg) | - | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 160mA | |
| Pd - Power Dissipation | 450mW | |
| RDS(on) | 2.2Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 50V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 30pF | |
| Gate Charge(Qg) | - | |
| Operating Temperature | -55℃~+150℃ |
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Features
AI Translation
- High-density cell design for ultra-low on-resistance RDS(on)
- Epoxy resin compliant with UL 94 V-0 flammability rating
- Moisture Sensitivity Level 1
- Halogen-free, "green" device
- Lead-free finish / RoHS compliant (suffix "P" denotes RoHS compliance)
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.0645 | $ 0.06 |
| 10+ | $ 0.0513 | $ 0.51 |
| 30+ | $ 0.0447 | $ 1.34 |
| 100+ | $ 0.0398 | $ 3.98 |
| 500+ | $ 0.0358 | $ 17.90 |
| 1,000+ | $ 0.0338 | $ 33.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 160mA | |
| Pd - Power Dissipation | 450mW | |
| RDS(on) | 2.2Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Drain to Source Voltage | 50V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 30pF | |
| Gate Charge(Qg) | - | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 160mA | |
| Pd - Power Dissipation | 450mW | |
| RDS(on) | 2.2Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 50V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 30pF | |
| Gate Charge(Qg) | - | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- High-density cell design for ultra-low on-resistance RDS(on)
- Epoxy resin compliant with UL 94 V-0 flammability rating
- Moisture Sensitivity Level 1
- Halogen-free, "green" device
- Lead-free finish / RoHS compliant (suffix "P" denotes RoHS compliance)
C3280248 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

