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onsemi FDN361ANRoHS

Manufacturer
MPN
FDN361AN
LCSC Part #
C3280168
Packaging
SOT-23-3
Customer #
Key Attributes
N-Channel, Current:1.8A, Voltage:30V
Datasheetpdf icononsemi FDN361AN
Alternative Parts10
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.254$ 0.25
200+$ 0.0983$ 19.66
500+$ 0.0949$ 47.45
1,000+$ 0.0932$ 93.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-23-3
Drain to Source Voltage30V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)1.8A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)150mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)220pF
Gate Charge(Qg)4nC@5V
TypeN-Channel

Introduction

AI Translation

This N-channel logic-level MOSFET is manufactured using Fairchild Semiconductor's PowerTrench process, which is specially optimized to minimize on-resistance while maintaining low gate charge for superior switching performance.

Features

AI Translation
  • R DS(on) = 0.150 Ω at V GS = 4.5 V.
  • 1.8 A, 30 V. R DS(on) = 0.100 Ω at V GS = 10 V.
  • Low gate charge (2.1 nC typical).
  • Fast switching speed.
  • High-performance trench technology for ultra-low R DS(on).
  • High-power version of industry-standard SOT-23 package. Same pin-out as SOT-23 with 30% improved power handling capability.

Applications

AI Translation
  • DC/DC Converter
  • Load Switch
  • Motor Driver

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
BSS306NTECH PUBLICSOT-234,720$ 0.0586
DMN3110STECH PUBLICSOT-232,950$ 0.0528
FDN361BNTECH PUBLICSOT-23260$0.0597 $0.0628
FDN361AN-TPTECH PUBLICSOT-23170$ 0.0397
IRLML2030TRPBF-TPTECH PUBLICSOT-232,460$ 0.0493
HSS3N10HUASHUOSOT-23L3,160$ 0.068
FDN359ANonsemiSOT-232,025$ 0.3195
RSR025N05HZGTLROHMTSMT-326$ 0.4387
YJL03G10AYANGJIESOT-23(TO-236)0$ 0.1014
FDN359BNonsemiSOT-230$ 0.3373