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EDA ModelsEasyEDA
onsemi NTMS4802NR2G
| Manufacturer | |
| MPN | NTMS4802NR2G |
| LCSC Part # | C3279896 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | N-Channel, Current:18A, Voltage:30V |
| Datasheet |  onsemi NTMS4802NR2G |
| RoHS Compliance | 3 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 880pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.66W | |
| Reverse Transfer Capacitance (Crss@Vds) | 460pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.3nF | |
| Gate Charge(Qg) | 75nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 880pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.66W | |
| Reverse Transfer Capacitance (Crss@Vds) | 460pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.3nF | |
| Gate Charge(Qg) | 75nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Low on-resistance R<sub>DS(on)</sub> to minimize conduction losses
- Low capacitance to minimize drive losses
- Optimized gate charge to minimize switching losses
- Lead-free device
Applications
AI Translation
- DC-DC Converter - Synchronous MOSFET - Printer
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 880pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.66W | |
| Reverse Transfer Capacitance (Crss@Vds) | 460pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.3nF | |
| Gate Charge(Qg) | 75nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 880pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.66W | |
| Reverse Transfer Capacitance (Crss@Vds) | 460pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.3nF | |
| Gate Charge(Qg) | 75nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Low on-resistance R<sub>DS(on)</sub> to minimize conduction losses
- Low capacitance to minimize drive losses
- Optimized gate charge to minimize switching losses
- Lead-free device
Applications
AI Translation
- DC-DC Converter - Synchronous MOSFET - Printer
C3279896 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |