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VISHAY SI1965DH-T1-BE3 product image
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VISHAY SI1965DH-T1-BE3RoHS

Manufacturer
MPN
SI1965DH-T1-BE3
LCSC Part #
C3279693
Packaging
SC-70-6
Customer #
Key Attributes
1.25W 710mΩ@1.8V 1V 2 P-Channel SC-70-6 FET, MOSFET Arrays RoHS
Datasheetpdf iconVISHAY SI1965DH-T1-BE3
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.2004$ 0.20
200+$ 0.0776$ 15.52
500+$ 0.0749$ 37.45
1,000+$ 0.0735$ 73.50
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerVISHAY
PackagingSC-70-6
Current - Continuous Drain(Id)1.14A;1.3A
Pd - Power Dissipation1.25W
RDS(on)710mΩ@1.8V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage12V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)25pF
Number2 P-Channel
Input Capacitance(Ciss)120pF
Gate Charge(Qg)4.2nC@8V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)41pF

Introduction

AI Translation

The new dual 6-pin SC-70 package features a copper lead frame, offering improved on-resistance and enhanced thermal performance compared to existing 3-pin and 6-pin packages with Alloy 42 lead frames. These devices are suited for small-to-medium load applications requiring miniaturized packaging. Devices in this package are available in multiple on-resistance values, including both N-channel and P-channel versions.

Features

AI Translation
  • Halogen-free per IEC 61249-2-21
  • TrenchFET Power MOSFET
  • RoHS compliant per directive 2002/95/EC

Applications

AI Translation
  • Small to medium load applications