VISHAY SQJQ160E-T1_GE3
| Manufacturer | |
| MPN | SQJQ160E-T1_GE3 |
| LCSC Part # | C3279472 |
| Packaging | PowerPAK-5(8x8) |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 602A PowerPAK-5(8x8) |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK-5(8x8) | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 6.681nF | |
| Current - Continuous Drain(Id) | 602A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 458pF | |
| RDS(on) | 0.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 16.07nF | |
| Gate Charge(Qg) | 275nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK-5(8x8) | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 6.681nF | |
| Current - Continuous Drain(Id) | 602A | |
| Operating Temperature - | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 458pF | |
| RDS(on) | 0.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 16.07nF | |
| Gate Charge(Qg) | 275nC@10V | |
| Type | N-Channel |
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Features
AI Translation
- TrenchFET Gen IV power MOSFET
- AEC-Q101 qualified
- 100 % Rg and UIS tested
- Thin 1.6 mm height
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 10.5171 | $ 10.52 |
| 10+ | $ 10.0536 | $ 100.54 |
| 30+ | $ 9.7624 | $ 292.87 |
| 100+ | $ 9.4648 | $ 946.48 |
| 500+ | $ 9.3298 | $ 4664.90 |
| 1,000+ | $ 9.2712 | $ 9271.20 |
Standard Packaging2000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK-5(8x8) | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 6.681nF | |
| Current - Continuous Drain(Id) | 602A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 458pF | |
| RDS(on) | 0.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 16.07nF | |
| Gate Charge(Qg) | 275nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK-5(8x8) | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 6.681nF | |
| Current - Continuous Drain(Id) | 602A | |
| Operating Temperature - | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 458pF | |
| RDS(on) | 0.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 16.07nF | |
| Gate Charge(Qg) | 275nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET Gen IV power MOSFET
- AEC-Q101 qualified
- 100 % Rg and UIS tested
- Thin 1.6 mm height
C3279472 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



