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Infineon IMBF170R1K0M1XTMA1RoHS

Manufacturer
Infineon
MPN
IMBF170R1K0M1XTMA1
LCSC Part #
C3279264
Packaging
TO-263-7-13
Customer #
Key Attributes
SICFET N-CH 1.7kV 5.2A TO-263-7-13
Datasheetpdf iconInfineon IMBF170R1K0M1XTMA1
In-Stock: 1,776
1,776 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 3.0112$ 3.01
10+$ 2.562$ 25.62
30+$ 2.2815$ 68.45
100+$ 1.808$ 180.80
500+$ 1.6783$ 839.15
1,000+$ 1.6215$ 1621.50
Standard Packaging1000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-263-7-13
Configuration-
Drain to Source Voltage1.7kV
Output Capacitance(Coss)7.2pF
Current - Continuous Drain(Id)5.2A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation68W
RDS(on)809mΩ@15V
Reverse Transfer Capacitance (Crss@Vds)0.7pF
Number1 N-channel
Input Capacitance(Ciss)275pF
Gate Charge(Qg)5nC
TypeN-Channel
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Features

AI Translation
  • Revolutionary semiconductor material - Silicon Carbide
  • Optimized for fly-back topologies
  • 12V/0V gate-source voltage compatible with most fly-back controllers
  • Very low switching losses
  • Benchmark gate threshold voltage, VGS(th) = 4.5V
  • Fully controllable dV/dt for EMI optimization

Applications

AI Translation
  • Energy generation
  • Solar string inverter
  • Solar Central inverter
  • Industrial power supplies
  • Industrial UPS
  • Industrial SMPS
  • Infrastructure
  • Charger