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VISHAY IRF640SPBFRoHS

Manufacturer
MPN
IRF640SPBF
LCSC Part #
C3277649
Packaging
D2PAK(TO-263)
Customer #
Key Attributes
MOSFET N-CH 200V 18A D2PAK(TO-263)
Datasheetpdf iconVISHAY IRF640SPBF
In-Stock: 1
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Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 2.0252$ 2.03
10+$ 2.0025$ 20.03
30+$ 1.9879$ 59.64
100+$ 1.928$ 192.80
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingD2PAK(TO-263)
Operating Temperature-55℃~+150℃
Drain to Source Voltage200V
Output Capacitance(Coss)430pF
Current - Continuous Drain(Id)18A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)70nC@10V
TypeN-Channel

Introduction

AI Translation

Third generation power MOSFETs provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (SiHF640L) is available for low-profile applications.

Features

AI Translation
  • Surface mount
  • Low-profile through-hole RoHS
  • Available in tape and reel
  • Dynamic dV/dt rating HALOGEN FREE
  • 150 °C operating temperature Available
  • Fast switching
  • Fully avalanche rated