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VISHAY SIZF360DT-T1-GE3 product image
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VISHAY SIZF360DT-T1-GE3RoHS

Manufacturer
VISHAY
MPN
SIZF360DT-T1-GE3
LCSC Part #
C3276771
Packaging
PowerPAIR(3x3)
Customer #
Key Attributes
Dual N-Channel MOSFET, Current:83A, Voltage:30V
Datasheetpdf iconVISHAY SIZF360DT-T1-GE3
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.8456$ 0.85
200+$ 0.3272$ 65.44
500+$ 0.3164$ 158.20
1,000+$ 0.3102$ 310.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerVISHAY
PackagingPowerPAIR(3x3)
Current - Continuous Drain(Id)143A
Pd - Power Dissipation12.8W
RDS(on)7.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)170pF
Number2 N-Channel
Input Capacitance(Ciss)3.15nF
Gate Charge(Qg)19.4nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)1.55nF
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Features

AI Translation
  • 4th Generation TrenchFET Power MOSFET
  • SkyFET Low-Side MOSFET with Integrated Schottky Diode
  • 100% Rg and UIS Tested
  • Dual Thermal Pads for Additional Heat Dissipation Path
  • Internal Half-Bridge Configuration in 3.3mm × 3.3mm Package

Applications

AI Translation
  • CPU core power
  • Computer/server peripherals
  • Point-of-load (POL)
  • Synchronous buck converter
  • Telecom DC/DC power supply