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LOWPOWER LPM3401B3F product image
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LOWPOWER LPM3401B3FRoHS

Manufacturer
LOWPOWERAsian Brands
MPN
LPM3401B3F
LCSC Part #
C324571
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 15V 4A SOT-23
Datasheetpdf iconLOWPOWER LPM3401B3F
In-Stock: 1,090
1,090 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
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QtyUnit PriceTotal Amount
10+$ 0.0666$ 0.67
100+$ 0.0532$ 5.32
300+$ 0.0465$ 13.95
3,000+$ 0.0415$ 124.50
6,000+$ 0.0375$ 225.00
9,000+$ 0.0355$ 319.50
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerLOWPOWER
PackagingSOT-23
Operating Temperature-55℃~+150℃
Drain to Source Voltage15V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)4A
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)68mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)680pF
Gate Charge(Qg)7nC@10V
TypeP-Channel
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Introduction

AI Translation

The LPM3401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.

Features

AI Translation
  • -15V/-4.0A, RDS(ON)<58mΩ (typ.) VGS=-10V
  • -15V/-3.0A, RDS(ON)<68mΩ (typ.) VGS=-4.5V
  • Super high density cell design for extremely low RDS(ON)
  • SOT23 Package

Applications

AI Translation
  • Portable Media Players/MP3 players
  • Cellular and Smart mobile phone LCD DSC Sensor Wireless Card