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MICROCHIP JAN2N2920

Produttore
MICROCHIP
Cod. Prod.
JAN2N2920
Cod. LCSC
C3201490
Imballo
TO-78-6
Numero Cliente
Attr. chiave
600 300mW 60V NPN 30mA TO-78-6 Bipolar Transistor Arrays
Scheda TecnicaMICROCHIP JAN2N2920
Parti alternative4
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
ProduttoreMICROCHIP
ImballoTO-78-6
Current - Collector Cutoff10uA
DC Current Gain600
Pd - Power Dissipation300mW
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO6V
ConfigurationStandalone
Transition frequency(fT)-
typeNPN
Vce Saturation(VCE(sat))300mV
Number2 NPN
Current - Collector(Ic)30mA
Operating Temperature-65℃~+200℃
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Descrizione

Traduzione AI

This specification covers the performance requirements for two electrically isolated, matched NPN silicon transistors as a dual unit. Four product assurance levels are provided for each device type, and two product assurance levels are provided for the die. RHA level designations "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices that meet RHA requirements. Unless otherwise specified, TC = +25℃. For TA > +25℃, derate linearly at 1.143 mW/℃ for one section and 2.000 mW/℃ for two sections; for TC > +25℃, derate linearly at 1.714 mW/℃ for one section and 2.571 mW/℃ for two sections.