ST(Semtech) MMBTSA1504G
| Produttore | ST(Semtech)Asian Brands |
| Cod. Prod. | MMBTSA1504G |
| Cod. LCSC | C3041452 |
| Imballo | TO-236 |
| Numero Cliente | |
| Attr. chiave | TRANS PNP 50V 150mA TO-236 |
| Scheda Tecnica | ST(Semtech) MMBTSA1504G |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | ST(Semtech) | |
| Imballo | TO-236 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 80MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 400 | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 150mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| type | PNP | |
| Number | 1 PNP | |
| Vce Saturation(VCE(sat)) | 300mV |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | ST(Semtech) | |
| Imballo | TO-236 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 80MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 400 |
| Tipo | Descrizione | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 150mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| type | PNP | |
| Number | 1 PNP | |
| Vce Saturation(VCE(sat)) | 300mV |
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Descrizione
Traduzione AI
For switching and general purpose applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain.
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | ST(Semtech) | |
| Imballo | TO-236 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 80MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 400 | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 150mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| type | PNP | |
| Number | 1 PNP | |
| Vce Saturation(VCE(sat)) | 300mV |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | ST(Semtech) | |
| Imballo | TO-236 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 80MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 400 |
| Tipo | Descrizione | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 150mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| type | PNP | |
| Number | 1 PNP | |
| Vce Saturation(VCE(sat)) | 300mV |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
For switching and general purpose applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain.
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



