MSKSEMI AO4805-MS
| Manufacturer | MSKSEMIAsian Brands |
| MPN | AO4805-MS |
| LCSC Part # | C3008143 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH ARR 30V 7.1A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 194pF | |
| Current - Continuous Drain(Id) | 7.1A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 20mΩ@10V;30mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 1.345nF | |
| Gate Charge(Qg) | 28.44nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
- Trench power low-voltage MOSFET technology
- High-density cell design for low RDS(ON)
- High-speed switching
Features
AI Translation
- 100% ▽V<sub>DS</sub> tested
Applications
AI Translation
- Battery Protection - Load Switch - Power Management
In-Stock: 165
165 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2945 | $ 1.47 |
| 50+ | $ 0.2332 | $ 11.66 |
| 150+ | $ 0.207 | $ 31.05 |
| 500+ | $ 0.1743 | $ 87.15 |
| 3,000+ | $ 0.1597 | $ 479.10 |
| 6,000+ | $ 0.151 | $ 906.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 194pF | |
| Current - Continuous Drain(Id) | 7.1A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 20mΩ@10V;30mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 1.345nF | |
| Gate Charge(Qg) | 28.44nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
- Trench power low-voltage MOSFET technology
- High-density cell design for low RDS(ON)
- High-speed switching
Features
AI Translation
- 100% ▽V<sub>DS</sub> tested
Applications
AI Translation
- Battery Protection - Load Switch - Power Management
C3008143 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



