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Infineon IRFR120NTRPBFRoHS

Manufacturer
Infineon
MPN
IRFR120NTRPBF
LCSC Part #
C3008
Packaging
DPAK(TO-252AA)
Customer #
Key Attributes
MOSFET N-CH 100V 9.4A DPAK(TO-252AA)
Datasheetpdf iconInfineon IRFR120NTRPBF
In-Stock: 40,000
40,000 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2707$ 1.35
50+$ 0.213$ 10.65
150+$ 0.1848$ 27.72
500+$ 0.1412$ 70.60
2,000+$ 0.1343$ 268.60
4,000+$ 0.1302$ 520.80
Standard Packaging2000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingDPAK(TO-252AA)
Drain to Source Voltage100V
Current - Continuous Drain(Id)9.4A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)210mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)330pF
Gate Charge(Qg)25nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features

AI Translation
  • Advanced Process Technology
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free