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ST STL19N60M2 product image
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ST STL19N60M2

Manufacturer
MPN
STL19N60M2
LCSC Part #
C2971050
Packaging
VDFN-8
Customer #
Key Attributes
MOSFET N-CH 600V 11A VDFN-8
DatasheetST STL19N60M2
RoHS Compliance3 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 14
14 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.5946$ 2.59
10+$ 2.5281$ 25.28
30+$ 2.4827$ 74.48
100+$ 2.4389$ 243.89
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingVDFN-8
Output Capacitance(Coss)40pF
Ciss-Input Capacitance791pF
Pd - Power Dissipation90W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Current - Continuous Drain(Id)11A
Reverse Transfer Capacitance (Crss)1.3pF
RDS(on)308mΩ@10V
Number1 N-channel
Gate Charge(Qg)21.5nC@10V
Vgs±25V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel

Introduction

AI Translation

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

AI Translation
  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications

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STL33N60M2STSimilarVDFN-8-Power4$ 4.7602
STL18N65M5STSimilarVDFN-8-Power34$ 5.6775
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