LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
ST VNS3NV04PTR-E product image
  • VNS3NV04PTR-E thumbnail 1
  • VNS3NV04PTR-E thumbnail 2
  • VNS3NV04PTR-E thumbnail 3
  • Pinout
  • Footprint
Images for reference only

ST VNS3NV04PTR-ERoHS

Manufacturer
ST
MPN
VNS3NV04PTR-E
LCSC Part #
C2970836
Packaging
SO-8
Customer #
Key Attributes
fully autoprotected Power MOSFET
Datasheetpdf iconST VNS3NV04PTR-E
In-Stock: 3
3 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.2305$ 1.23
10+$ 1.2028$ 12.03
30+$ 1.1833$ 35.50
100+$ 1.1654$ 116.54
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Power Distribution Switches, Load Drivers
ManufacturerST
PackagingSO-8
Operating Temperature-40℃~+150℃
FeaturesOvercurrent Protection;Short-Circuit Protection;Over temperature protection;Overvoltage protection
RDS(on)120mΩ
Report an ErrorShow similar products (0) >

Introduction

AI Translation

The VNN3NV04P-E, VNS3NV04P-E, are monolithic devices designed in VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

Features

AI Translation
  • Linear current limitation
  • Thermal shutdown
  • Short circuit protection
  • Integrated clamp Low current drawn from input pin
  • Diagnostic feedback through input pin
  • ESD protection
  • Direct access to the gate of the Power MOSFET (analog driving)
  • Compatible with standard Power MOSFET in compliance with the 2002/95/EC European directive