ST PD57030-E

This device is a common-source N-channel enhancement-mode lateral-effect RF power transistor designed for high-gain, wideband commercial and industrial applications. It operates in common-source mode at 28 V up to 1 GHz. Manufactured using ST's latest LDMOS technology and housed in the industry's first true SMD plastic RF power package — PowerSO-10RF — the device delivers excellent gain, linearity, and reliability. Its outstanding linearity performance makes it an ideal choice for base station applications. The PowerSO-10 plastic package is designed for high reliability, and is ST's first JEDEC-qualified high-power SMD package specially optimized for RF requirements, offering excellent RF performance and ease of assembly.

• Excellent thermal stability
• Common-source configuration
• Output power P_OUT = 30 W, gain 14 dB at 945 MHz / 28 V
• New RF plastic package

• Switching applications