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ST STD30NF06T4
| Manufacturer | |
| MPN | STD30NF06T4 |
| LCSC Part # | C2970487 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 28A TO-252 |
| Datasheet |  ST STD30NF06T4 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 220pF | |
| Current - Continuous Drain(Id) | 28A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.75nF | |
| Gate Charge(Qg) | 58nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 220pF | |
| Current - Continuous Drain(Id) | 28A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.75nF | |
| Gate Charge(Qg) | 58nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This Power MOSFET is the latest development of unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features
AI Translation
- TYPICAL RDS(on)=0.020Ω
- EXCEPTIONAL dv/dt CAPABILITY
- 100% AVALANCHE TESTED
- THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
- SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")
Applications
AI Translation
- HIGH CURRENT, HIGH SWITCHING SPEED
- MOTOR CONTROL , AUDIO AMPLIFIERS
- SOLENOID AND RELAY DRIVERS
- DC-DC & DC-AC CONVERTERS
In-Stock: 100
100 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.9252 | $ 1.93 |
| 10+ | $ 1.6799 | $ 16.80 |
| 30+ | $ 1.5451 | $ 46.35 |
| 100+ | $ 1.3924 | $ 139.24 |
| 500+ | $ 1.3257 | $ 662.85 |
| 1,000+ | $ 1.2949 | $ 1294.90 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 220pF | |
| Current - Continuous Drain(Id) | 28A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.75nF | |
| Gate Charge(Qg) | 58nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 220pF | |
| Current - Continuous Drain(Id) | 28A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.75nF | |
| Gate Charge(Qg) | 58nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This Power MOSFET is the latest development of unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features
AI Translation
- TYPICAL RDS(on)=0.020Ω
- EXCEPTIONAL dv/dt CAPABILITY
- 100% AVALANCHE TESTED
- THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
- SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")
Applications
AI Translation
- HIGH CURRENT, HIGH SWITCHING SPEED
- MOTOR CONTROL , AUDIO AMPLIFIERS
- SOLENOID AND RELAY DRIVERS
- DC-DC & DC-AC CONVERTERS
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRFR3410TR(UMW) | UMW | TO-252 | 2,480 | $ 0.3205 | ||
| MDT40N10D | Minos | TO-252 | 640 | $0.1683 $0.1979 | ||
| HY1908D-VB | VBsemi Elec | TO-252 | 50 | $0.9164 $1.0781 | ||
| AM50N08-14D-VB | VBsemi Elec | TO-252 | 30 | $1.3820 $1.4547 | ||
| AUIRFR3607TRPBF-VB | VBsemi Elec | TO-252 | 16 | $1.4732 $1.5507 | ||
| RU7570L-VB | VBsemi Elec | TO-252 | 6 | $1.1771 $1.3848 | ||
| MPG30N10 | Minos | TO-252-2 | 20 | $0.2222 $0.2614 | ||
| MDT30N10 | Minos | TO-252 | 3,000 | $ 0.2329 | ||
| IRFR540ZTRPBF-MNS | Minos | TO-252 | 2,370 | $ 0.1465 | ||
| IPD50N08S4-13 | Infineon | TO-252-3 | 30 | $ 1.6685 |