Images for reference only
EDA ModelsEasyEDA
ST STL24N60M2
| Manufacturer | |
| MPN | STL24N60M2 |
| LCSC Part # | C2970349 |
| Packaging | VDFN-8-Power |
| Customer # | |
| Key Attributes | N-channel, Current:18A, Voltage:650V |
| Datasheet | ST STL24N60M2 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 9 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | VDFN-8-Power | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| RDS(on) | 210mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | VDFN-8-Power | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| RDS(on) | 210mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is an N-channel power MOSFET developed using MDmesh™ M2 technology. With its strip layout and improved vertical structure, the device features low on-resistance and optimized switching characteristics, making it suitable for high-efficiency converters with demanding requirements.
Features
AI Translation
- Ultra-low gate charge
- Excellent output capacitance (Coss) characteristics
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
In-Stock: 8
8 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 7.0932 | $ 7.09 |
| 10+ | $ 6.9892 | $ 69.89 |
| 30+ | $ 6.9193 | $ 207.58 |
| 100+ | $ 6.8495 | $ 684.95 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | VDFN-8-Power | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| RDS(on) | 210mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | VDFN-8-Power | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| RDS(on) | 210mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is an N-channel power MOSFET developed using MDmesh™ M2 technology. With its strip layout and improved vertical structure, the device features low on-resistance and optimized switching characteristics, making it suitable for high-efficiency converters with demanding requirements.
Features
AI Translation
- Ultra-low gate charge
- Excellent output capacitance (Coss) characteristics
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
C2970349 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STL33N60M2 | ST | VDFN-8-Power | 4 | $ 4.7602 | ||
| STL45N60DM6 | ST | VDFN-8-Power | 16 | $ 15.8564 | ||
| STL36N60M6 | ST | PowerVDFN-8 | 10 | $ 10.9728 | ||
| STL38N65M5 | ST | VDFN-8-Power | 23 | $ 11.0572 | ||
| STL36N55M5 | ST | VDFN-8-Power | 10 | $ 10.5504 | ||
| STL26N65DM2 | ST | PowerVDFN-8 | 0 | $ 2.4534 | ||
| STL33N65M2 | ST | VDFN-8-Power | 0 | $ 2.4695 | ||
| STL21N65M5 | ST | PowerVDFN-8 | 0 | $ 7.769 | ||
| STL52N60DM6 | ST | PowerVDFN-8 | 0 | $ 9.5723 |