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ST STW10N105K5 product image
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ST STW10N105K5RoHS

Manufacturer
ST
MPN
STW10N105K5
LCSC Part #
C2970264
Packaging
TO-247
Customer #
Key Attributes
MOSFET N-CH 1050V 6A TO-247
Datasheetpdf iconST STW10N105K5
In-Stock: 25
25 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 6.0047$ 6.00
10+$ 5.9169$ 59.17
30+$ 5.8568$ 175.70
100+$ 5.7983$ 579.83
Standard Packaging30/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-247
Operating Temperature-55℃~+150℃
Drain to Source Voltage1.05kV
Current - Continuous Drain(Id)6A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)1.3pF
RDS(on)1.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)545pF
Gate Charge(Qg)21.5nC@10V
TypeN-Channel
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Introduction

AI Translation

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

AI Translation
  • Industry’s lowest RDS(on) Industry’s best figure of merit (FoM)
  • Ultra low gate charge 100% avalanche tested Zener-protected

Applications

AI Translation
  • Switching applications