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EDA-ModelleEasyEDA
ST STD20NF06LAG
| Hersteller | |
| Herst.-Teilenr. | STD20NF06LAG |
| LCSC-Nr. | C2970140 |
| Verp. | TO-252(DPAK) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 60V 24A TO-252(DPAK) |
| Datenblatt | ST STD20NF06LAG |
| RoHS-Konformität | 3 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 13nC@5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 13nC@5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Merkmale
KI-Übersetzung
- AEC-Q101 qualified
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge
Anwendungen
KI-Übersetzung
- Switching applications
Vorrätig: 5
5 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.8808 | $ 0.88 |
| 10+ | $ 0.8593 | $ 8.59 |
| 30+ | $ 0.8439 | $ 25.32 |
| 100+ | $ 0.8285 | $ 82.85 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 13nC@5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 13nC@5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Merkmale
KI-Übersetzung
- AEC-Q101 qualified
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge
Anwendungen
KI-Übersetzung
- Switching applications
C2970140 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| STD20NF06LT4 | ST | DPAK | 96 | $ 0.8903 | ||
| HSU6014 | HUASHUO | TO-252-2 | 3,425 | $ 0.1654 | ||
| STN442D | STANSON Tech. | TO-252 | 1,970 | $ 0.1722 | ||
| ASDM60N30KQ-R | ASDsemi | TO-252 | 1,845 | $ 0.1995 | ||
| E065N9P5CL1 | Existar | TO-252 | 30 | $0.1083 $0.3608 | ||
| WGD40N10V | Wild Goose | TO-252 | 170 | $ 0.1983 | ||
| MDT25N06L | Minos | TO-252 | 2,280 | $ 0.1038 | ||
| MDT35N06L | Minos | TO-252 | 2,500 | $ 0.1472 | ||
| STD20NF06T4 | ST | DPAK | 0 | $ 1.5841 | ||
| TK25S06N1L,LXHQ | TOSHIBA | DPAK | 0 | $ 0.9121 |