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YANGJIE YJD25N10A
| Manufacturer | YANGJIEAsian Brands |
| MPN | YJD25N10A |
| LCSC Part # | C2942417 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 45W 100V 25A 52mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet | YANGJIE YJD25N10A |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | YANGJIE | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 73pF | |
| Ciss-Input Capacitance | 2.071nF | |
| Pd - Power Dissipation | 45W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 25A | |
| Reverse Transfer Capacitance (Crss) | 54pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 51.4nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | YANGJIE | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 73pF | |
| Ciss-Input Capacitance | 2.071nF | |
| Pd - Power Dissipation | 45W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 25A | |
| Reverse Transfer Capacitance (Crss) | 54pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 51.4nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
- Trench power medium-voltage MOSFET technology
- Excellent thermal dissipation package
- High-density cell design for low RDS(ON)
- Moisture Sensitivity Level 1
- Epoxy meets UL 94 V-0 flammability rating
- Halogen-free
Features
AI Translation
- VDS 100V
- ID 25A
- RDS(ON) (at VGS = 10 V) < 52 mΩ
- RDS(ON) (at VGS = 4.5 V) < 56 mΩ
- 100% EAS tested
- 100% \Delta VDS tested
Applications
AI Translation
- DC-DC Converter - Power Management - Backlight Source
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 925
925 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3037 | $ 1.52 |
| 50+ | $ 0.2395 | $ 11.98 |
| 150+ | $ 0.212 | $ 31.80 |
| 500+ | $ 0.1777 | $ 88.85 |
| 2,500+ | $ 0.1451 | $ 362.75 |
| 5,000+ | $ 0.136 | $ 680.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | YANGJIE | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 73pF | |
| Ciss-Input Capacitance | 2.071nF | |
| Pd - Power Dissipation | 45W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 25A | |
| Reverse Transfer Capacitance (Crss) | 54pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 51.4nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | YANGJIE | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 73pF | |
| Ciss-Input Capacitance | 2.071nF | |
| Pd - Power Dissipation | 45W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 25A | |
| Reverse Transfer Capacitance (Crss) | 54pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 51.4nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
- Trench power medium-voltage MOSFET technology
- Excellent thermal dissipation package
- High-density cell design for low RDS(ON)
- Moisture Sensitivity Level 1
- Epoxy meets UL 94 V-0 flammability rating
- Halogen-free
Features
AI Translation
- VDS 100V
- ID 25A
- RDS(ON) (at VGS = 10 V) < 52 mΩ
- RDS(ON) (at VGS = 4.5 V) < 56 mΩ
- 100% EAS tested
- 100% \Delta VDS tested
Applications
AI Translation
- DC-DC Converter - Power Management - Backlight Source
C2942417 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |