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WILLSEMI WNM2046B-3/TR
| Manufacturer | WILLSEMIAsian Brands |
| MPN | WNM2046B-3/TR |
| LCSC Part # | C2941861 |
| Packaging | DFN1006-3L |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 0.71A DFN1006-3L |
| Datasheet | WILLSEMI WNM2046B-3/TR |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | DFN1006-3L | |
| Output Capacitance(Coss) | 13.2pF | |
| Ciss-Input Capacitance | 50.6pF | |
| Pd - Power Dissipation | 320mW | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 710mA | |
| Reverse Transfer Capacitance (Crss) | 8.3pF | |
| RDS(on) | 420mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 870pC@4.5V | |
| Vgs | ±5V | |
| Gate Threshold Voltage (Vgs(th)) | 850mV | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | DFN1006-3L | |
| Output Capacitance(Coss) | 13.2pF | |
| Ciss-Input Capacitance | 50.6pF | |
| Pd - Power Dissipation | 320mW | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 710mA | |
| Reverse Transfer Capacitance (Crss) | 8.3pF | |
| RDS(on) | 420mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 870pC@4.5V | |
| Vgs | ±5V | |
| Gate Threshold Voltage (Vgs(th)) | 850mV | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The WNM2046B is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2046B is Pb-free.
Features
AI Translation
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package DFN1006-3L
Applications
AI Translation
- Small Signal Switching
- Small Moto Driver
Every Order Guarantee
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Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 10+ | $ 0.0942 | $ 0.94 |
| 100+ | $ 0.0794 | $ 7.94 |
| 300+ | $ 0.072 | $ 21.60 |
| 1,000+ | $ 0.0664 | $ 66.40 |
| 5,000+ | $ 0.062 | $ 310.00 |
| 10,000+ | $ 0.0598 | $ 598.00 |
Standard Packaging10000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | DFN1006-3L | |
| Output Capacitance(Coss) | 13.2pF | |
| Ciss-Input Capacitance | 50.6pF | |
| Pd - Power Dissipation | 320mW | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 710mA | |
| Reverse Transfer Capacitance (Crss) | 8.3pF | |
| RDS(on) | 420mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 870pC@4.5V | |
| Vgs | ±5V | |
| Gate Threshold Voltage (Vgs(th)) | 850mV | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | DFN1006-3L | |
| Output Capacitance(Coss) | 13.2pF | |
| Ciss-Input Capacitance | 50.6pF | |
| Pd - Power Dissipation | 320mW | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 710mA | |
| Reverse Transfer Capacitance (Crss) | 8.3pF | |
| RDS(on) | 420mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 870pC@4.5V | |
| Vgs | ±5V | |
| Gate Threshold Voltage (Vgs(th)) | 850mV | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The WNM2046B is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2046B is Pb-free.
Features
AI Translation
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package DFN1006-3L
Applications
AI Translation
- Small Signal Switching
- Small Moto Driver
C2941861 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| WNM2046-3/TR | WILLSEMI | Similar | DFN1006-3L | 9,760 | $ 0.0395 | ||
| WNM2046E-3/TR | WILLSEMI | Similar | DFN1006-3L | 7,520 | $ 0.0447 | ||
| WNM2072-3/TR | WILLSEMI | Similar | DFN1006-3L | 0 | $ 0.0465 | ||
| WNM2096-3/TR | WILLSEMI | Similar | DFN1006-3L | 0 | $ 0.1071 |