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WILLSEMI ESD5465E-6/TR product image
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WILLSEMI ESD5465E-6/TR

Manufacturer
WILLSEMIAsian Brands
MPN
ESD5465E-6/TR
LCSC Part #
C2941814
Packaging
SOT-23-6L
Customer #
Key Attributes
TVS DIODE 5VWM 16VC 18VC SOT-23-6L
DatasheetWILLSEMI ESD5465E-6/TR
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
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Minimum: 10Multiple: 10Sales Unit: Piece
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QtyUnit Price(Reference Only)Total Amount
10+$ 0.0447$ 0.45
100+$ 0.0438$ 4.38
300+$ 0.0432$ 12.96
1,000+$ 0.0426$ 42.60
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ManufacturerWILLSEMI
PackagingSOT-23-6L
Clamping Voltage16V;18V
Operating Temperature-40℃~+85℃
Peak Pulse Current (Ipp)15A@8/20us;50A@8/20us
Peak Pulse Power Dissipation (Ppp)240W@8/20us;900W@8/20us
Voltage - Breakdown8.5V
Number of ChannelsFour channels
typeTVS
PolarityUnidirectional
Reverse Leakage Current (Ir)10nA
Reverse Stand-Off Voltage (Vrwm)5V
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Introduction

AI Translation

The ESD5465E is a low capacitance TVS (Transient Voltage Suppressor) array designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by ESD (Electrostatic Discharge). The ESD5465E incorporates four pairs of low capacitance steering diodes plus a TVS diode. The ESD5465E may be used to provide ESD protection up to ±30 kV (contact discharge) according to IEC61000 - 4 - 2, and withstand peak pulse current up to 40A (5/50ns) according to IEC61000 - 4 - 4, 15A (8/20μs) according to IEC61000 - 4 - 5. The ESD5465E is available in SOT23 - 6L package. Standard products are Pb - free and Halogen - free.

Features

AI Translation
  • Reverse stand - off voltage: 5V max.
  • Transient protection for each line according to IEC61000 - 4 - 2 (ESD): ±30 kV (contact discharge)
  • IEC61000 - 4 - 4 (EFT): 40A (5/50ns, Any I/O to GND)
  • IEC61000 - 4 - 5 (surge): 15A [8/20μs, Any I/O to GND), 50A (8/20μs, VDD to GND)
  • Low capacitance: C_I/O - GND = 1.8 pF typ.
  • Ultra - low leakage current: I_R < 10 nA typ.
  • Low clamping voltage: V_Cl = 13V < I_PP = 16A (TLP)
  • Solid - state silicon technology

Applications

AI Translation
  • USB 2.0
  • Video Graphics Cards DVI
  • IEEE 1394
  • Monitors and Flat Panel Displays
  • 10/100 Ethernet
  • Notebooks