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ROHM RYM002N05GT2CLRoHS

Manufacturer
ROHM
MPN
RYM002N05GT2CL
LCSC Part #
C2941617
Packaging
SOT-723
Customer #
Key Attributes
MOSFET N-CH 50V 200mA SOT-723
Datasheetpdf iconROHM RYM002N05GT2CL
In-Stock: 140
140 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0589$ 0.59
100+$ 0.0473$ 4.73
300+$ 0.0415$ 12.45
1,000+$ 0.0371$ 37.10
5,000+$ 0.0277$ 138.50
8,000+$ 0.026$ 208.00
Standard Packaging8000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerROHM
PackagingSOT-723
Drain to Source Voltage50V
Output Capacitance(Coss)9pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)3.3Ω@1.2V
Number1 N-channel
Input Capacitance(Ciss)26pF
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging8000
Sales UnitPiece

Introduction

AI Translation

These N-channel enhancement-mode power MOSFETs are fabricated using Trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency fast-switching applications.

Features

AI Translation
  • High speed switching
  • Small package(VMT3)
  • Ultra low voltage drive(0.9V drive)

Applications

AI Translation
  • Switching