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onsemi FDS8958ARoHS

Manufacturer
MPN
FDS8958A
LCSC Part #
C2931003
Packaging
SOIC-8
Customer #
Key Attributes
30V 7A 3V 2W 80mΩ@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOIC-8 Single FETs, MOSFETs RoHS
Datasheetpdf icononsemi FDS8958A
In-Stock: 71
71 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.0382$ 1.04
10+$ 0.8628$ 8.63
30+$ 0.7662$ 22.99
100+$ 0.6567$ 65.67
500+$ 0.6085$ 304.25
1,000+$ 0.5859$ 585.90
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOIC-8
Drain to Source Voltage30V
Output Capacitance(Coss)145pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W
RDS(on)80mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)70pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)575pF
Gate Charge(Qg)26nC@10V
Vgs±20V
TypeN-Channel + P-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

These dual N-channel and P-channel enhancement-mode power MOSFETs are fabricated using Fairchild Semiconductor's advanced PowerTrench process, which is specifically optimized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low on-state power dissipation and fast switching.

Features

AI Translation
  • Q1: N-Channel
    • 7.0 A, 30 V, RDS(on) = 0.028 Ω at VGS = 10 V
    • RDS(on) = 0.040 Ω at VGS = 4.5 V
  • Q2: P-Channel
    • -5 A, -30 V, RDS(on) = 0.052 Ω at VGS = -10 V
    • RDS(on) = 0.080 Ω at VGS = -4.5 V
  • High switching speed
  • High power and current handling capability in widely used SMT packages

Applications

AI Translation
  • Drivers: relays, solenoids, lamps, hammers, etc.
  • Power converter circuits
  • Load/power switches for portable devices