FOSAN 2N7002

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	FOSAN
Packaging	SOT-23
Drain to Source Voltage	60V
Output Capacitance(Coss)	2.75pF
Current - Continuous Drain(Id)	340mA
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Pd - Power Dissipation	350mW
Reverse Transfer Capacitance (Crss@Vds)	1.9pF
RDS(on)	1.2Ω@10V
Number	1 N-channel
Input Capacitance(Ciss)	27.5pF
Gate Charge(Qg)	1.6nC
Type	N-Channel

In-Stock: 350

350 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
50+	$ 0.008	$ 0.40
500+	$ 0.0061	$ 3.05
3,000+	$ 0.0054	$ 16.20
6,000+	$ 0.0047	$ 28.20
24,000+	$ 0.0042	$ 100.80
51,000+	$ 0.0039	$ 198.90
Standard Packaging3000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	FOSAN
Packaging	SOT-23
Drain to Source Voltage	60V
Output Capacitance(Coss)	2.75pF
Current - Continuous Drain(Id)	340mA
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Pd - Power Dissipation	350mW
Reverse Transfer Capacitance (Crss@Vds)	1.9pF
RDS(on)	1.2Ω@10V
Number	1 N-channel
Input Capacitance(Ciss)	27.5pF
Gate Charge(Qg)	1.6nC
Type	N-Channel