Infineon IRFP4368PBF
| Manufacturer | |
| MPN | IRFP4368PBF |
| LCSC Part # | C2918 |
| Packaging | TO-247AC |
| Customer # | |
| Key Attributes | MOSFET N-CH 75V 195A TO-247AC |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247AC | |
| Drain to Source Voltage | 75V | |
| Output Capacitance(Coss) | 1.67nF | |
| Current - Continuous Drain(Id) | 195A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 520W | |
| Reverse Transfer Capacitance (Crss@Vds) | 770pF | |
| RDS(on) | 1.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 19.23nF | |
| Gate Charge(Qg) | 570nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SoA
- Enhanced body diode dV/dt and dl/dt Capability
Applications
AI Translation
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
In-Stock: 1,401
1,401 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.7386 | $ 1.74 |
| 10+ | $ 1.4777 | $ 14.78 |
| 25+ | $ 1.2088 | $ 30.22 |
| 100+ | $ 1.0467 | $ 104.67 |
| 500+ | $ 0.9754 | $ 487.70 |
| 1,000+ | $ 0.943 | $ 943.00 |
Standard Packaging25/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247AC | |
| Drain to Source Voltage | 75V | |
| Output Capacitance(Coss) | 1.67nF | |
| Current - Continuous Drain(Id) | 195A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 520W | |
| Reverse Transfer Capacitance (Crss@Vds) | 770pF | |
| RDS(on) | 1.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 19.23nF | |
| Gate Charge(Qg) | 570nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SoA
- Enhanced body diode dV/dt and dl/dt Capability
Applications
AI Translation
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



