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Infineon IPW65R080CFDRoHS

Manufacturer
Infineon
MPN
IPW65R080CFD
LCSC Part #
C2916133
Packaging
TO-247
Customer #
Key Attributes
MOSFET 650V 43.3A TO-247
Datasheetpdf iconInfineon IPW65R080CFD
In-Stock: 372
372 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 4.0434$ 4.04
10+$ 3.4441$ 34.44
30+$ 3.0871$ 92.61
90+$ 2.7252$ 245.27
510+$ 2.5588$ 1304.99
990+$ 2.4845$ 2459.66
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247
Drain to Source Voltage650V
Current - Continuous Drain(Id)43.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation391W
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.03nF
Gate Charge(Qg)167nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

CoolMos Tm is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. 650V CoolMOsTM CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler.

Features

AI Translation
  • Ultra-fast body diode
  • Very high commutation ruggedness
  • Extremely low losses due to very low FOM Rdson*Qg and Eoss
  • Easy to use/drive
  • Pb-free plating, Halogen free mold compound
  • Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)

Applications

AI Translation
  • 650V CoolMOS TM CFD2 is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server, Telecom and Solar.