JSCJ TIP127F
| Fabricant | JSCJAsian Brands |
| Réf. Fab. | TIP127F |
| Réf. LCSC | C2910325 |
| Condit. | TO-220F |
| Numéro Client | |
| Caract. clés | 100V 1000 5A PNP TO-220F Single Bipolar Transistors RoHS |
| Fiche Technique | JSCJ TIP127F |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricant | JSCJ | |
| Condit. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 200uA | |
| Vbe Saturation(VBE(sat)) | - | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 1000 | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 5A | |
| Pd - Power Dissipation | 2W | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2V;4V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricant | JSCJ | |
| Condit. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 200uA | |
| Vbe Saturation(VBE(sat)) | - | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | - |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 1000 | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 5A | |
| Pd - Power Dissipation | 2W | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2V;4V |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Medium power complementary silicon transistors
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Minimum: 1Multiple: 1Unité de vente: Piece
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| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 0.5199 | $ 0.52 |
| 10+ | $ 0.4371 | $ 4.37 |
| 50+ | $ 0.3932 | $ 19.66 |
| 100+ | $ 0.3477 | $ 34.77 |
| 500+ | $ 0.3282 | $ 164.10 |
| 1,000+ | $ 0.3169 | $ 316.90 |
Boîtier Standard50/Full Tube | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricant | JSCJ | |
| Condit. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 200uA | |
| Vbe Saturation(VBE(sat)) | - | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 1000 | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 5A | |
| Pd - Power Dissipation | 2W | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2V;4V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricant | JSCJ | |
| Condit. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 200uA | |
| Vbe Saturation(VBE(sat)) | - | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | - |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 1000 | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 5A | |
| Pd - Power Dissipation | 2W | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2V;4V |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Medium power complementary silicon transistors
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Détails |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Détails |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



