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Infineon/CYPRESS S25FL064LABMFI010 product image
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Infineon/CYPRESS S25FL064LABMFI010RoHS

Manufacturer
MPN
S25FL064LABMFI010
LCSC Part #
C2909898
Packaging
SOIC-8-208mil
Customer #
Key Attributes
64-Mb (8-MB), 3.0 V FL-L SPI Flash Memory
Datasheetpdf iconInfineon/CYPRESS S25FL064LABMFI010
In-Stock: 100
100 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.352$ 2.35
10+$ 1.9901$ 19.90
30+$ 1.7636$ 52.91
100+$ 1.5321$ 153.21
500+$ 1.4262$ 713.10
1,000+$ 1.3822$ 1382.20
Standard Packaging280/Full Tray
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerInfineon/CYPRESS
PackagingSOIC-8-208mil
Voltage - Supply2.7V~3.6V
Memory Size64Mbit
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency108MHz
FeaturesPower-on reset;Hardware write protection;Software write protection;Absolute write protection
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Page Programming Time (Tpp)-
Standby Supply Current20uA
InterfaceSPI

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging280
Sales UnitPiece

Introduction

AI Translation

The Cypress FL-L Family devices are Flash Nonvolatile Memory products using Floating Gate technology 65-nm process lithography. The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO), and Quad Peripheral Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock. The architecture features a Page Programming Buffer that allows up to 256 bytes to be programmed in one operation and provides individual 4 KB sector, 32 KB half block sector, 64 KB block sector, or entire chip erase. By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically. The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections, and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly (XIP), and storing re-programmable data.

Features

AI Translation
  • Serial Peripheral Interface (SPI) with Multi-I/O
    • Clock polarity and phase modes 0 and 3
    • Double Data Rate (DDR) option
    • Quad peripheral interface (QPI) option
    • Extended addressing: 24 or 32 bit address options
    • Serial command subset and footprint compatible with S25FLA, S25FL1-K, S25FL-P, S25FL-S, and S25FS-S SPI families
    • Multi I/O command subset and footprint compatible with S25-FL-P, S25FL-S and S25FS-S SPI families
  • Read
    • Commands: Normal, Fast, Dual I/O, Quad I/O, DualO, QuadO, DDR Quad I/O
    • Modes: Burst wrap, Continuous (XIP), QPI
    • Serial flash discoverable parameters (SFDP) for configuration information
  • Program Architecture
    • 256-Bytes page programming buffer
    • Program suspend and resume
  • Erase Architecture
    • Uniform 4 KB sector erase
    • Uniform 32 KB half block erase
    • Uniform 64 KB block erase
    • Chip erase
    • Erase suspend and resume
  • Status and configuration Register protection
  • Four security regions of 256-bytes each outside the main Flash array
  • Legacy block protection: Block range
  • Individual and region protection
    • Individual block lock: Volatile individual sector/block
    • Pointer region: Nonvolatile sector/block range
    • Power supply Lock-down, password, or permanent protection of security regions 2 and 3 and pointer region
  • Technology
    • 65-nm Floating Gate technology
    • Single Supply Voltage with CMOS I/O: 2.7V to 3.6V
  • Temperature Range / Grade
    • Industrial (-40℃ to +85℃)
    • Industrial Plus (-40℃ to +105℃)
    • Automotive, AEC-Q100 Grade 3 (-40℃ to +85℃)
    • Automotive, AEC-Q100 Grade 2 (-40℃ to +105℃)
    • Automotive, AEC-Q100 Grade 1 (-40℃ to +125℃)
  • Packages (All Pb-free)
    • 8-lead SOIC 208 mil (SOC008)
    • 16-lead SOIC 300 mil (SO3016)
    • USON 4x4 mm (UNF008)
    • WSON 5x6 mm (WND008)
    • BGA-24 6x8 mm
      • 5x5 ball (FAB024) footprint
      • 4x6 ball (FAC024) footprint
    • Known good die and known tested die