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MSKSEMI MSK30P02DF product image
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MSKSEMI MSK30P02DFRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
MSK30P02DF
LCSC Part #
C2902922
Packaging
DFN3X3-8L
Customer #
Key Attributes
MOSFET P-CH 20V 30A DFN3X3-8L
Datasheetpdf iconMSKSEMI MSK30P02DF
In-Stock: 2,320
2,320 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1728$ 0.86
50+$ 0.1523$ 7.62
150+$ 0.1436$ 21.54
500+$ 0.1326$ 66.30
2,500+$ 0.1165$ 291.25
5,000+$ 0.1136$ 568.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingDFN3X3-8L
Drain to Source Voltage20V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation18W
Reverse Transfer Capacitance (Crss@Vds)590pF
RDS(on)15mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.8nF
Gate Charge(Qg)35nC@4.5V
TypeP-Channel
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Introduction

AI Translation

The MSK30P02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

Features

AI Translation
  • VDS = -20V, ID = -30A
  • RDS(ON) < 15 mΩ @ VGS = -4.5V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply