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onsemi AFGY100T65SPD
| Manufacturer | |
| MPN | AFGY100T65SPD |
| LCSC Part # | C2902242 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | IGBT - 650 V 100 A FS3 for EV traction inverter application |
| Datasheet | onsemi AFGY100T65SPD |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-3 | |
| Td(off) | 78ns | |
| Pd - Power Dissipation | 660W | |
| Td(on) | 36ns | |
| Current - Collector(Ic) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 38pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.3V | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 105ns | |
| Switching Energy(Eoff) | 2.7mJ | |
| Turn-On Energy (Eon) | 5.1mJ | |
| Input Capacitance(Cies) | 4.22nF | |
| Output Capacitance(Coes) | 302pF | |
| Gate Charge(Qg) | 109nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-3 | |
| Td(off) | 78ns | |
| Pd - Power Dissipation | 660W | |
| Td(on) | 36ns | |
| Current - Collector(Ic) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 38pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.3V | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 105ns | |
| Switching Energy(Eoff) | 2.7mJ | |
| Turn-On Energy (Eon) | 5.1mJ | |
| Input Capacitance(Cies) | 4.22nF | |
| Output Capacitance(Coes) | 302pF | |
| Gate Charge(Qg) | 109nC |
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 15.8824 | $ 15.88 |
| 10+ | $ 14.4056 | $ 144.06 |
| 30+ | $ 13.1221 | $ 393.66 |
| 100+ | $ 12.3683 | $ 1236.83 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-3 | |
| Td(off) | 78ns | |
| Pd - Power Dissipation | 660W | |
| Td(on) | 36ns | |
| Current - Collector(Ic) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 38pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.3V | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 105ns | |
| Switching Energy(Eoff) | 2.7mJ | |
| Turn-On Energy (Eon) | 5.1mJ | |
| Input Capacitance(Cies) | 4.22nF | |
| Output Capacitance(Coes) | 302pF | |
| Gate Charge(Qg) | 109nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-3 | |
| Td(off) | 78ns | |
| Pd - Power Dissipation | 660W | |
| Td(on) | 36ns | |
| Current - Collector(Ic) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 38pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.3V | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 105ns | |
| Switching Energy(Eoff) | 2.7mJ | |
| Turn-On Energy (Eon) | 5.1mJ | |
| Input Capacitance(Cies) | 4.22nF | |
| Output Capacitance(Coes) | 302pF | |
| Gate Charge(Qg) | 109nC |
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C2902242 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FGY120T65SPD | onsemi | TO-247-3LD | 10 | $ 15.843 | ||
| AFGY120T65SPD | onsemi | TO-247-3 | 1 | $ 12.9734 | ||
| IKQ75N120CS6 | Infineon | TO-247-3 | 20 | $ 13.7882 | ||
| FGY100T65SCDT | onsemi | TO-247-3 | 10 | $ 24.5302 | ||
| MSG100T65BLC0 | MASPOWER | TO-247 | 30 | $ 3.0422 | ||
| FGY75T120SQDN | onsemi | TO-247-3 | 140 | $ 5.7773 | ||
| BKE120N075HS1 | Bestirpower | TO247-3PLUS | 0 | $ 3.7392 | ||
| FGY75T120SWD | onsemi | TO-247-3 | 0 | $ 8.2629 | ||
| FGY100T120RWD | onsemi | TO-247-3 | 0 | $ 16.0578 | ||
| APT75GN120B2G | MICROCHIP | TO-247-3 | 0 | $ 43.2818 |