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TOSHIBA GT50JR22(S1WLD,E,S product image
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  • Pinout Diagram
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TOSHIBA GT50JR22(S1WLD,E,SRoHS

Manufacturer
TOSHIBA
MPN
GT50JR22(S1WLD,E,S
LCSC Part #
C2880445
Packaging
TO-3P-3
Customer #
Key Attributes
Discrete IGBTs Silicon N-Channel IGBT
Datasheetpdf iconTOSHIBA GT50JR22(S1WLD,E,S

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerTOSHIBA
PackagingTO-3P-3
Td(off)330ns
Pd - Power Dissipation250W
Td(on)250ns
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)2.7nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)7.5V
Vce Saturation(VCE(sat))2.2V@50A,15V
Collector Cut-Off Current (Ices)1mA
Reverse Recovery Time(trr)350ns
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging25
Sales UnitPiece

Features

AI Translation
  • 6.5th generation
  • The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip.
  • Enhancement mode
  • High-speed switching IGBT : tf = 0.05 μs (typ.) (IC = 50 A) FWD : trr = 0.35 μs (typ.) (IF = 15 A)
  • Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A)
  • High junction temperature : Tj = 175℃ (max)

Applications

AI Translation
  • Dedicated to Current-Resonant Inverter Switching Applications
In-Stock: 3,000
3,000 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.6575$ 1.66
10+$ 1.385$ 13.85
25+$ 1.0529$ 26.32
100+$ 0.8836$ 88.36
500+$ 0.8078$ 403.90
1,000+$ 0.774$ 774.00
Standard Packaging25/Full Tube
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