TI CSD16412Q5A
| Manufacturer | |
| MPN | CSD16412Q5A |
| LCSC Part # | C2876534 |
| Packaging | VSONP-8(4.9x5.8) |
| Customer # | |
| Key Attributes | 25V 52A 2.3V 3W 16mΩ@4.5V 1 N-channel N-Channel VSONP-8(4.9x5.8) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | VSONP-8(4.9x5.8) | |
| Drain to Source Voltage | 25V | |
| Output Capacitance(Coss) | 450pF | |
| Current - Continuous Drain(Id) | 52A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 16mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 530pF | |
| Gate Charge(Qg) | 3.8nC@4.5V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NexFET power MOSFETs are designed to minimize losses in power conversion applications.
Features
AI Translation
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Lead-free terminal plating
- RoHS compliant
- Halogen-free
- SON 5mm x 6mm plastic package
Applications
AI Translation
- Point-of-load synchronous buck converter for networking, telecom, and computer system applications
- Optimized for control FET applications
In-Stock: 60
60 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5074 | $ 0.51 |
| 10+ | $ 0.4962 | $ 4.96 |
| 30+ | $ 0.4898 | $ 14.69 |
| 100+ | $ 0.4819 | $ 48.19 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | VSONP-8(4.9x5.8) | |
| Drain to Source Voltage | 25V | |
| Output Capacitance(Coss) | 450pF | |
| Current - Continuous Drain(Id) | 52A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 16mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 530pF | |
| Gate Charge(Qg) | 3.8nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NexFET power MOSFETs are designed to minimize losses in power conversion applications.
Features
AI Translation
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Lead-free terminal plating
- RoHS compliant
- Halogen-free
- SON 5mm x 6mm plastic package
Applications
AI Translation
- Point-of-load synchronous buck converter for networking, telecom, and computer system applications
- Optimized for control FET applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



