TI CSD16401Q5
| Manufacturer | |
| MPN | CSD16401Q5 |
| LCSC Part # | C2872963 |
| Packaging | SON-8(5x6) |
| Customer # | |
| Key Attributes | MOSFET N-CH 25V 261A SON-8(5x6) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | SON-8(5x6) | |
| Drain to Source Voltage | 25V | |
| Output Capacitance(Coss) | 3.3nF | |
| Current - Continuous Drain(Id) | 261A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Pd - Power Dissipation | 156W | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 1.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.1nF | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This 25 V, 1.3 mΩ NexFET power MOSFET in a 5 mm × 6 mm SON package is designed to minimize power loss in power conversion applications.
Features
AI Translation
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- SON 5 mm × 6 mm plastic package
Applications
AI Translation
- Point-of-load synchronous buck converter for networking, telecom, and computing systems
- Optimized for synchronous FET applications
In-Stock: 110
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.9845 | $ 1.98 |
| 10+ | $ 1.6876 | $ 16.88 |
| 30+ | $ 1.501 | $ 45.03 |
| 100+ | $ 1.3111 | $ 131.11 |
| 500+ | $ 1.2235 | $ 611.75 |
| 1,000+ | $ 1.1862 | $ 1186.20 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | SON-8(5x6) | |
| Drain to Source Voltage | 25V | |
| Output Capacitance(Coss) | 3.3nF | |
| Current - Continuous Drain(Id) | 261A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Pd - Power Dissipation | 156W | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 1.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.1nF | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This 25 V, 1.3 mΩ NexFET power MOSFET in a 5 mm × 6 mm SON package is designed to minimize power loss in power conversion applications.
Features
AI Translation
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- SON 5 mm × 6 mm plastic package
Applications
AI Translation
- Point-of-load synchronous buck converter for networking, telecom, and computing systems
- Optimized for synchronous FET applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



