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TI CSD18511KTTTRoHS

Manufacturer
TI
MPN
CSD18511KTTT
LCSC Part #
C2861416
Packaging
TO-263-3
Customer #
Key Attributes
40V 194A 2.4V 188W 2.6mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS
Datasheetpdf iconTI CSD18511KTTT
In-Stock: 8
8 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.4183$ 1.42
10+$ 1.394$ 13.94
30+$ 1.3761$ 41.28
100+$ 1.3599$ 135.99
Standard Packaging50/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingTO-263-3
Operating Temperature-55℃~+175℃
Drain to Source Voltage40V
Output Capacitance(Coss)591pF
Current - Continuous Drain(Id)194A
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation188W
Reverse Transfer Capacitance (Crss@Vds)306pF
RDS(on)2.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.94nF
Gate Charge(Qg)63.9nC@10V
TypeN-Channel
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Introduction

AI Translation

This 40V, 2.1mΩ NexFET power MOSFET in a D2PAK (TO-263) package is designed to minimize losses in power conversion applications.

Features

AI Translation
  • Low Qg and Qgd
  • Low RDS(ON)
  • Low thermal resistance
  • Avalanche rated
  • Lead-free terminal plating
  • RoHS compliant
  • Halogen-free
  • D2PAK plastic package

Applications

AI Translation
  • Secondary-side synchronous rectifier
  • Motor control